Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same

ABSTRACT

A FinFET device structure and method for forming the same are provided. The FinFET device structure includes a stop layer formed over a substrate and a fin structure formed over the stop layer. The FinFET device structure includes a gate structure formed over the fin structure and a source/drain (S/D) structure adjacent to the gate structure. A bottom surface of the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This Application claims the benefit of U.S. Provisional Application No. 62/174,236, filed on Jun. 11, 2015, and entitled “fin field effect transistor (FinFET) device structure with stop layer and method for forming the same”, the entirety of which is incorporated by reference herein.

BACKGROUND

Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing insulating or dielectric layers, conductive layers, and semiconductive layers of material over a semiconductor substrate, and patterning the various material layers using lithography to form circuit components and elements thereon. Many integrated circuits are typically manufactured on a single semiconductor wafer, and individual dies on the wafer are singulated by sawing between the integrated circuits along a scribe line. The individual dies are typically packaged separately, in multi-chip modules, for example, or in other types of packaging.

As the semiconductor industry has progressed into nanometer technology process nodes in pursuit of higher device density, higher performance, and lower costs, challenges from both fabrication and design issues have resulted in the development of three-dimensional designs, such as the fin field effect transistor (FinFET). FinFETs are fabricated with a thin vertical “fin” (or fin structure) extending from a substrate. The channel of the FinFET is formed in this vertical fin. A gate is provided over the fin. Advantages of the FinFET may include reducing the short channel effect and providing a higher current flow.

Although existing FinFET devices and methods of fabricating FinFET devices have generally been adequate for their intended purpose, they have not been entirely satisfactory in all respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIGS. 1A-1J show perspective representations of various stages of forming a FinFET device structure, in accordance with some embodiments of the disclosure.

FIGS. 2A-2F are cross-sectional representations of various stages of forming FinFET device structure shown in FIGS. 1F to 1J in accordance with some embodiments.

FIG. 3A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 3B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 3A, in accordance with some embodiments.

FIG. 4A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 4B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 4A, in accordance with some embodiments.

FIG. 5A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 5B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 5A, in accordance with some embodiments.

FIG. 6A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 6B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 6A, in accordance with some embodiments.

FIG. 7A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 7B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 7A, in accordance with some embodiments.

FIG. 8A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 8B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 8A, in accordance with some embodiments.

FIG. 9A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 9B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 9A, in accordance with some embodiments.

FIG. 10A is a perspective view of a semiconductor structure in accordance with some embodiments.

FIG. 10B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 10A, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements. It should be understood that additional operations can be provided before, during, and after the method, and some of the operations described can be replaced or eliminated for other embodiments of the method.

Embodiments for forming a fin field effect transistor (FinFET) device structure are provided. FIGS. 1A-1J show perspective representations of various stages of forming a FinFET device structure 100 a, in accordance with some embodiments of the disclosure.

Referring to FIG. 1A, a first substrate 102 a is provided. The first substrate 102 a may be made of silicon or another semiconductor material. Alternatively or additionally, the first substrate 102 a may include other elementary semiconductor materials such as germanium. In some embodiments, the first substrate 102 a is made of a compound semiconductor such as silicon carbide, gallium arsenic, indium arsenide, or indium phosphide. In some embodiments, the first substrate 102 a is made of an alloy semiconductor such as silicon germanium, silicon germanium carbide, gallium arsenic phosphide, or gallium indium phosphide. In some embodiments, the first substrate 102 a includes an epitaxial layer. For example, the first substrate 102 a has an epitaxial layer overlying a bulk semiconductor.

Afterwards, a stop layer 103 is formed on the first substrate 102. The stop layer 103 is used as an etching stop layer in the subsequent process. In some embodiments, the stop layer 103 is made of SiGeOx, SiGe, SiO, SiP, SiPOx and combinations thereof. In some embodiments, the stop layer 103 is formed by performing an ion implant process on the first substrate 102 a. In some embodiments, the stop layer 103 is formed by performing a deposition process over the first substrate 102 a, such as an atomic layer deposition (ALD) process, a chemical vapor deposition (CVD) process, a physical vapor deposition (PVD) process, or another applicable process. When the stop layer 103 is formed by the ALD process, the quality of the stop layer 103 is good.

Afterwards, a second substrate 102 b is formed over the stop layer 103. In other words, the stop layer 103 is disposed between the first substrate 102 a and the second substrate 102 b. The second substrate 102 b may be made of silicon or another semiconductor material. The first substrate 102 a and the second substrate 102 b may be made of the same or different materials. The lattice constant of the stop layer 103 is different from that of the first substrate 102 a.

In some embodiments, the stop layer 103 and the first substrate 102 a are made of different materials, and the stop layer 103 and the second substrate 102 b are made of different materials. More specifically, the first substrate 102 a, the stop layer 103 and the second substrate 102 b are made of three different materials. In some other embodiments, the first substrate 102 a and the second substrate 102 b are made of the same material, and the stop layer 103 and the first substrate are made of different materials.

Afterwards, a dielectric layer 104 and a mask layer 106 are formed over the substrate 102, and a photoresist layer 108 is formed over the mask layer 106. The photoresist layer 108 is patterned by a patterning process. The patterning process includes a photolithography process and an etching process. The photolithography process includes photoresist coating (e.g., spin-on coating), soft baking, mask aligning, exposure, post-exposure baking, developing the photoresist, rinsing and drying (e.g., hard baking). The etching process includes a dry etching process or a wet etching process.

The dielectric layer 104 is a buffer layer between the second substrate 102 b and the mask layer 106. In addition, the dielectric layer 104 is used as a stop layer when the mask layer 106 is removed. The dielectric layer 104 may be made of silicon oxide. The mask layer 106 may be made of silicon oxide, silicon nitride, silicon oxynitride, or another applicable material. In some other embodiments, more than one mask layer 106 is formed over the dielectric layer 104.

The dielectric layer 104 and the mask layer 106 are formed by deposition processes, such as a chemical vapor deposition (CVD) process, a high-density plasma chemical vapor deposition (HDPCVD) process, a spin-on process, a sputtering process, or another applicable process.

After the photoresist layer 108 is patterned, the dielectric layer 104 and the mask layer 106 are patterned by using the patterned photoresist layer 108 as a mask as shown in FIG. 1B, in accordance with some embodiments. As a result, a patterned pad layer 104 and a patterned mask layer 106 are obtained. Afterwards, the patterned photoresist layer 108 is removed.

Afterwards, an etching process is performed on the substrate 102 to form a fin structure 110 by using the patterned dielectric layer 104 and the patterned mask layer 106 as a mask. The etching process may be a dry etching process or a wet etching process. It should be noted that the stop layer 103 is also pattered, and the sidewalls of the stop layer 103 is exposed. More specifically, the fin structure 110 is formed over the stop layer 103. The stop layer 103 is formed between the first substrate 102 a and the fin structure 110.

In some embodiments, the substrate 102 is etched by a dry etching process. The dry etching process includes using the fluorine-based etchant gas, such as SF₆, C_(x)F_(y), NF₃ or combinations thereof. The etching process may be a time-controlled process, and continue until the fin structure 110 reach a predetermined height. In some other embodiments, the fin structure 110 has a width that gradually increases from the top portion to the lower portion.

After the fin structure 110 is formed, the patterned dielectric layer 104 and the patterned mask layer 106 are removed. An insulating layer 112 is formed to cover the fin structure 110 over the substrate 102 as shown in FIG. 1C, in accordance with some embodiments.

In some embodiments, the insulating layer 112 is made of silicon oxide, silicon nitride, silicon oxynitride, fluoride-doped silicate glass (FSG), or another low-k dielectric material. The insulating layer 112 may be deposited by a chemical vapor deposition (CVD) process, a spin-on-glass process, or another applicable process.

Afterwards, the insulating layer 112 is thinned or planarized to expose the top surface of the fin structure 110 as shown in FIG. 1D, in accordance with some embodiments. In some embodiments, the insulating layer 112 is thinned by a chemical mechanical polishing (CMP) process.

As a result, an isolation structure 114, such as a shallow trench isolation (STI) structure, surrounds the fin structure 110. In some embodiments, a lower portion of the fin structure 110 is surrounded by the isolation structure 114, and an upper portion of the fin structure 110 protrudes from the isolation structure 114. In other words, a portion of the fin structure 110 is embedded in the isolation structure 114. The isolation structure 114 prevents electrical interference or crosstalk.

It should be noted that a top surface of the stop layer 103 is located at a position that is level with a top surface of the isolation structure 114. More specifically, the stop layer 103 is surrounded by the isolation structure 114, the fin structure 110 and the first substrate 102 a.

In some embodiments, the stop layer 103 has a thickness in a range from about 1 nm to about 50 nm. If the thickness is smaller than 1 nm, the etch stop ability of the stop layer 103 is not good enough. If the thickness is greater than 50 nm, the thermal budget may be increased.

Afterwards, a first dummy gate structure 116 a and a second dummy gate structure 116 b are formed across the fin structure 110 and extend over the isolation structure 114 as shown in FIG. 1E, in accordance with some embodiments. The first dummy gate structure 116 a is formed in a first region 11 and the second dummy gate structure 116 b is formed in a second region 12.

In some embodiments, the first dummy gate structure 116 a includes a first dummy gate dielectric layer 118 a and a first dummy gate electrode layer 120 a formed over the first dummy gate dielectric layer 118 a. In some embodiments, the second dummy gate structure 116 b includes a second dummy gate dielectric layer 118 b and a second dummy gate electrode layer 120 b formed over the second dummy gate dielectric layer 118 b.

After the first dummy gate structure 116 a and the second dummy gate structure 116 b are formed, first spacers 122 a are formed on the opposite sidewalls of the first dummy gate structure 116 a, and second spacers 122 b are formed on the opposite sidewalls of the second dummy gate structure 116 b. The first spacers 122 a and the second spacers 122 b may be a single layer or multiple layers.

In some embodiments, the first dummy gate structure 116 a has a first width W₁ in a direction parallel to the fin structure 110, and the second dummy gate structure 116 b has a second width W₂ in a direction parallel to the fin structure 110. In other words, the first width W₁ is measured from an edge of the first spacers 122 a to an edge of the opposite first spacer 122 a. The second width W₂ is measured from an edge of the second spacers 122 b to an edge of the opposite second spacer 122 b. The first width W₁ is smaller than the second width W₂.

FIGS. 2A-2F are cross-sectional representations of various stages of forming FinFET device structure 100 a shown in FIGS. 1E to 1J in accordance with some embodiments. FIG. 2A shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 1E, in accordance with some embodiments. As shown in FIG. 2A, the first dummy gate structure 116 a and the second dummy gate structure 116 b are formed over the fin structure 110 and the stop layer 103.

Afterwards, a top portion of the fin structure 110 adjacent to the first dummy gate structure 116 a and the second dummy gate structure 116 b is removed as shown in FIG. 1F and FIG. 2B, in accordance with some embodiments. As a result, a recess 123 is formed over the stop layer 103. A bottom surface of the recess 123 is level with the top surface of the stop layer 103. In some embodiments, a portion of the fin structure 110 adjacent to the first dummy gate structure 116 a and the second dummy gate structure 116 b are recessed to form recesses 123 at two sides of fin structure 110. In some embodiments, the top portion of the fin structure 110 is removed by an etching process, and the etching process stops at the top surface of the stop layer 103.

It should be noted that the etching process stops at the top surface of the stop layer 103, and therefore the etch depth of the recess 123 in the vertical direction is controlled by using the stop layer 103. The etch width of the recess 123 in the horizontal direction may be adjusted according to actual applications. As a result, the etching profile of the recess 123 may be controlled.

Afterwards, a source/drain (S/D) structure 124 is formed in the recess 123 as shown in FIG. 1G and FIG. 2C, in accordance with some embodiments. The bottom surfaces of the S/D structure 124 are located at a position that is higher than a bottom surface of the stop layer 103. More specifically, the bottom surface of the S/D structure 124 is located at position that is level with the top surface of the stop layer 103. The bottom surface of the S/D structure 124 is in direct contact with the top surface of the stop layer 103.

In some embodiments, a strained material is grown in the recess 123 by an epitaxial (epi) process to form the source/drain (S/D) structure 124. In addition, the lattice constant of the strained material may be different from the lattice constant of the substrate 102. In some embodiments, the source/drain structure 124 includes Ge, SiGe, InAs, InGaAs, InSb, GaAs, GaSb, InAlP, InP, or the like. When an N-type FET (NFET) device is desired, the S/D structure 124 may include an epitaxially grown silicon (epi Si). Alternatively, when a P-type FET (PFET) device is desired, the S/D structure 124 may include an epitaxially grown silicon germanium (SiGe). In some embodiments, the S/D structure 124 and the stop layer 103 are made of different materials.

In some embodiments, the S/D structure 124 has a diamond-like shape. The S/D structure 124 has a raised height H₁ over the top surface of the fin structure 110. If raised height H₁ is too large, gate spacers 122 a, 122 b may collapse due to compressive stress induced from the S/D structure 124. If raised height H₁ is too small, a contact landing window will be smaller than predetermined value.

After the S/D structure 124 is formed, a contact etch stop layer (CESL) 126 is formed over the substrate 102, and an inter-layer dielectric (ILD) structure 128 is formed over the contact etch stop layer 126 as shown in FIG. 1H and FIG. 2D, in accordance with some embodiments.

In some embodiments, the contact etch stop layer 126 is made of silicon nitride, silicon oxynitride, and/or other applicable materials. The contact etch stop layer 126 may be formed by plasma enhanced CVD, low pressure CVD, ALD, or other applicable processes.

The ILD structure 128 may include multilayers made of multiple dielectric materials, such as silicon oxide, silicon nitride, silicon oxynitride, tetraethoxysilane (TEOS), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), low-k dielectric material, and/or other applicable dielectric materials. Examples of low-k dielectric materials include, but are not limited to, fluorinated silica glass (FSG), carbon doped silicon oxide, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), or polyimide. The ILD structure 128 may be formed by chemical vapor deposition (CVD), physical vapor deposition, (PVD), atomic layer deposition (ALD), spin-on coating, or other applicable processes.

Afterwards, a polishing process is performed to the ILD structure 128 until the top surface of the first dummy gate structure 116 a and the top surface of the second dummy gate structure 116 b are exposed. In some embodiments, the ILD structure 128 is planarized by a chemical mechanical polishing (CMP) process.

After the ILD structure 128 is formed, the first dummy gate structure 116 a is removed to form a first trench 130 a in the ILD structure 128 and the second dummy gate structure 116 b is removed to form a second trench 130 b in the ILD structure 128 as shown in FIG. 1I and FIG. 2E, in accordance with some embodiments. The first dummy gate structure 116 a and the second dummy gate structure 116 b may be removed by a wet etching process or a dry etching process.

After the first trench 130 a and the second trench 130 b are formed, a first gate structure 132 a and a second gate structure 132 b are formed in the first trench 130 a and the second trench 130 b, respectively, as shown in FIG. 1J and FIG. 2F, in accordance with some embodiments.

The first gate structure 132 a includes a first gate dielectric layer 134 a and a first gate electrode layer 138 a. The second gate structure 132 b includes a second gate dielectric layer 134 b and a second gate electrode layer 138 b.

The gate dielectric layers 134 a, 134 b may be a single layer or multiple layers. The gate dielectric layers 134 a, 134 b are independently made of silicon oxide (SiOx), silicon nitride (SixNy), silicon oxynitride (SiON), dielectric material(s) with low dielectric constant (low-k), or combinations thereof. In some embodiments, the gate dielectric layer 134 is made of an extreme low-k (ELK) dielectric material with a dielectric constant (k) less than about 2.5. In some embodiments, ELK dielectric materials include carbon doped silicon oxide, amorphous fluorinated carbon, parylene, bis-benzocyclobutenes (BCB), polytetrafluoroethylene (PTFE) (Teflon), or silicon oxycarbide polymers (SiOC). In some embodiments, ELK dielectric materials include a porous version of an existing dielectric material, such as hydrogen silsesquioxane (HSQ), porous methyl silsesquioxane (MSQ), porous polyarylether (PAE), porous SiLK, or porous silicon oxide (SiO₂). In some embodiments, the gate dielectric layers 134 a, 134 b are deposited by a plasma enhanced chemical vapor deposition (PECVD) process or a spin coating process.

In some other embodiments, a work function layer (not shown) is formed between the gate dielectric layers 134 a, 134 b and the gate electrode layers 138 a, 138 b. In some embodiments, the work function layer is made of metal material, and the metal material may include N-work-function metal or P-work-function metal. The N-work-function metal includes tungsten (W), copper (Cu), titanium (Ti), silver (Ag), aluminum (Al), titanium aluminum alloy (TiAl), titanium aluminum nitride (TiAlN), tantalum carbide (TaC), tantalum carbon nitride (TaCN), tantalum silicon nitride (TaSiN), manganese (Mn), zirconium (Zr) or combinations thereof. The P-work-function metal includes titanium nitride (TiN), tungsten nitride (WN), tantalum nitride (TaN), ruthenium (Ru) or combinations thereof.

The gate electrode layers 138 a, 138 b are made of conductive material, such as aluminum (Al), copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), or other applicable materials. The gate electrode layers 138 a, 138 b are formed by a deposition process, such as chemical vapor deposition (CVD), physical vapor deposition (PVD), atomic layer deposition (ALD), high density plasma CVD (HDPCVD), metal organic CVD (MOCVD), or plasma enhanced CVD (PECVD).

A channel region is formed below the first gate structure 132 a and the second gate structure 132 b, and the channel region is wrapped by the first gate structure 132 a and the second gate structure 132 b. The material of the S/D structure 124 is different from that of the first substrate 102 a. Accordingly, a channel region of the FinFET device structure 100 a is strained or stressed to enable carrier mobility of a device and enhance device performance.

The recess 123 (shown in FIG. 1F and FIG. 2B) defines a surface proximity. The surface proximity is the distance that the top surface of the fin structure 110 extends from a sidewall of the gate structure 132 a, 132 b to the recess 123 (or if the recess 123 is filled, the S/D structure 124). As mentioned above, the etch depth of the recess 123 in the vertical direction may be stopped at the stop layer 103. Once the etch height is stopped, the etch width in the horizontal direction may be controlled by adjusted the etching parameters of the etching process. As a result, an etching profile of the recess 123 may be controlled. In other words, the portion of the fin structure 110 may largely be etched in a lateral direction, with minimal vertical direction etching. Therefore, the surface proximity is decreased. When the surface proximity is decreased, the performance and reliability of the FinFET device structure 100 a is improved. In addition, the drain induction barrier lower (DIBL) effect is inhibited.

The lattice constant of the stop layer 103 is different from that of the first gate electrode layer 138 a and the second gate electrode layer 138 b. Accordingly, the channel region of the FinFET device structure 100 a may be strained or stressed because of the difference of the lattice constant between the two materials.

For regions with different exposed areas (or etched areas), it is difficult to control etch uniformity due to the loading effect. Depending on the etching strategy, the loading effect is the etch rate for a larger area being either faster or slower than it is for a smaller area. In other words, the loading effect is the etch rate in large area being mismatched with the etch rate in small area. This means that the loading effect may be affected by the pattern density. Therefore, while etching the fin structure 110 in the first region 11 and the second region 12, it is more difficult to control the uniformity of the etch depth. By inserting the stop layer 103 between the fin structure 110 and the first substrate 102 a, the loading effect due to the different pattern density is reduced.

FIG. 3A is a perspective view of a semiconductor structure 100 b in accordance with some embodiments. Some processes and materials used to form semiconductor structure 100 b are similar to, or the same as, those used to form semiconductor structure 100 a and are not repeated herein. FIG. 3B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 3A, in accordance with some embodiments.

As shown in FIG. 3A, the top surface of the stop layer 103 is located at a position that is lower than the top surface of the isolation structure 114. The sidewalls of the stop layer 103 are completely in direct contact with the isolation structure 114.

As shown in FIG. 3B, a bottom portion of the S/D structure 124 is formed in the stop layer 103. A portion of the S/D structure 124 is inserted into the stop layer 103. In other words, the bottom surface of the S/D structure 124 is located at a position that is higher than the bottom surface of the stop layer 103. The bottom surface of the S/D structure 124 is located at a position that is lower than the top surface of the stop layer 103.

FIG. 4A is a perspective view of a semiconductor structure 100 c in accordance with some embodiments. Some processes and materials used to form semiconductor structure 100 c are similar to, or the same as, those used to form semiconductor structure 100 a and are not repeated herein. FIG. 4B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 4A, in accordance with some embodiments.

As shown in FIG. 4A, a portion of the stop layer 103 is removed, and the bottom surface of the S/D structure 124 is in direct contact with the top surface of the first substrate 102 a.

As shown in FIG. 4B, the remaining stop layer 103 is formed directly below the first gate structure 132 a and the second gate structure 132 b. No stop layer is formed directly below the S/D structure 124.

FIG. 5A is a perspective view of a semiconductor structure 100 d in accordance with some embodiments. FIG. 5B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 5A, in accordance with some embodiments.

As shown in FIG. 5A, the top surface of the stop layer 103 is located at a position that is higher than the top surface of the isolation structure 114. In some embodiments, the middle portion of the stop layer 103 is substantially level with the top surface of the isolation structure 114.

As shown in FIG. 5B, the bottom surface of the S/D structure 124 is at a position that is higher than the bottom surface of the stop layer 103. The bottom surface of the S/D structure 124 is substantially level with the top surface of the stop layer 103.

FIG. 6A is a perspective view of a semiconductor structure 100 e in accordance with some embodiments. FIG. 6B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 6A, in accordance with some embodiments.

As shown in FIG. 6A, the top surface of the stop layer 103 is located at a position that is higher than the top surface of the isolation structure 114. In some embodiments, the middle portion of the stop layer 103 is substantially level with the stop surface of the isolation structure 114.

As shown in FIG. 6B, a portion of the S/D structure 124 is formed in the stop layer 103. A portion of the S/D structure 124 is inserted into the stop layer 103. The bottom surface of the S/D structure 124 is located at a position that is lower than the top surface of the stop layer 103.

FIG. 7A is a perspective view of a semiconductor structure 100 f in accordance with some embodiments. FIG. 7B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 7A, in accordance with some embodiments.

As shown in FIG. 7A, the bottom surface of the stop layer 103 is located at a position that is lower than the top surface of the isolation structure 114.

As shown in FIG. 7B, a portion of the S/D structure 124 is formed in the stop layer 103. The bottom surface of the S/D structure 124 is located at a position that is level with the bottom surface of the stop layer 103.

FIG. 8A is a perspective view of a semiconductor structure 100 g in accordance with some embodiments. FIG. 8B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 8A, in accordance with some embodiments.

As shown in FIG. 8A, the bottom surface of the stop layer 103 is located at a position that is level with the top surface of the isolation structure 114. The top surface of the stop layer 103 is located at a position that is higher than the top surface of the isolation structure 114.

As shown in FIG. 8B, the bottom surface of the S/D structure 124 is located at a position that is level with the top surface of the stop layer 103.

FIG. 9A is a perspective view of a semiconductor structure 100 h in accordance with some embodiments. FIG. 9B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 9A, in accordance with some embodiments.

As shown in FIG. 9A, the top surface of the stop layer 103 is located at a position that is higher than the top surface of the isolation structure 114. The bottom surface of the stop layer 103 is located at a position that is level with the top surface of the isolation structure 114.

As shown in FIG. 9B, a portion of the S/D structure 124 is formed in the stop layer 103. The bottom surface of the S/D structure 124 is located at a position that is lower than the top surface of the stop layer 103.

FIG. 10A is a perspective view of a semiconductor structure 100I in accordance with some embodiments. FIG. 10B shows a cross-sectional representation of the FinFET device structure taken along line II′ of FIG. 10A, in accordance with some embodiments.

As shown in FIG. 10A, the bottom surface of the stop layer 103 is located at a position that is level with the top surface of the isolation structure 114.

As shown in FIG. 10B, the bottom surface of the S/D structure 124 is located at a position that is level with the bottom surface of the stop layer 103.

Embodiments for a FinFET device structure and a method for formation of the same are provided. A FinFET device structure includes a stop layer over a substrate, and a fin structure formed over the stop layer. A gate structure is formed over the fin structure, and a S/D structure formed in a recess adjacent to the gate structure. The etching profile of a recess is controlled by using the stop layer. The surface proximity is reduced by forming the stop layer. Therefore, the performance and reliability of the FinFET device structure is improved.

In some embodiments, a FinFET device structure is provided. The FinFET device structure includes a stop layer formed over a substrate and a fin structure formed over the stop layer. The FinFET device structure includes a gate structure formed over the fin structure and a source/drain (S/D) structure adjacent to the gate structure. A bottom surface of the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.

In some embodiments, a FinFET device structure is provided. The FinFET device structure includes a stop layer formed over a substrate and an isolation structure formed over the substrate. A top surface of the stop layer is located at a position that is higher than, level with or lower than a top surface of the isolation structure. The FinFET device structure includes a fin structure formed over the stop layer and a gate structure formed over the fin structure. The FinFET device structure further includes a source/drain (S/D) structure adjacent to the gate structure.

In some embodiments, a method for forming a semiconductor device structure is provided. The method includes forming a stop layer over a substrate and forming a fin structure over the stop layer. The method also includes forming an isolation structure over the substrate. The isolation structure is adjacent to the stop layer. The method includes forming a dummy gate structure over the fin structure and removing a portion of the fin structure to form a recess over the substrate. The recess is adjacent to the dummy gate structure. The method further includes forming a source/drain (S/D) structure in the recess, and the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A fin field effect transistor (FinFET) device structure, comprising: a stop layer formed over a substrate, wherein the stop layer is made of a first composition of SiGeOx, SiOx, SiPOx or a combinations thereof, wherein the first composition extends from a top surface of the stop layer to a bottom surface of the stop layer, the bottom surface of the stop layer interfacing the substrate; an isolation structure formed over the substrate, wherein the isolation structure is laterally adjacent to the stop layer; a fin structure formed over the stop layer and interfacing the top surface of the stop layer; a gate structure formed over a channel region of the fin structure and directly above the isolation structure; and a source/drain (S/D) structure adjacent to the gate structure, wherein the stop layer contiguously extends from under the gate structure to under an entirety of a length of the S/D structure, the length of the S/D structure extending from the channel region to a terminus edge of the S/D structure opposite the channel region, and wherein a bottom surface of the S/D structure is in direct contact with the top surface the stop layer.
 2. The fin field effect transistor (FinFET) device structure as claimed in claim 1, wherein the stop layer is made of the first composition of SiGeOx, SiPOx or a combination thereof.
 3. The fin field effect transistor (FinFET) device structure as claimed in claim 1, wherein the stop layer and the S/D structure include different semiconductor materials.
 4. The fin field effect transistor (FinFET) device structure as claimed in claim 1, wherein the top surface of the stop layer is located at a position that is higher than a bottom surface of the isolation structure.
 5. The fin field effect transistor (FinFET) device structure as claimed in claim 1, wherein the gate structure comprises a gate dielectric layer and a gate electrode layer, and a lattice constant of the gate electrode layer is different from a lattice constant of the stop layer.
 6. A fin field effect transistor (FinFET) device structure, comprising: a stop layer formed over a substrate, wherein the stop layer is made of a first insulating composition including at least one of SiGeOx or SiPOx, and wherein the stop layer has a first top surface of the first insulating composition and a first bottom surface opposite the first top surface, the first bottom surface having the first insulating composition; an isolation structure formed over the substrate, wherein the isolation structure has a top surface, wherein the first top surface of the stop layer is located at a position coplanar with the top surface of the isolation structure, wherein the isolation structure has a second insulating composition different than the first insulating composition; a fin structure formed over the stop layer and interfacing the first insulating composition; a gate structure formed over the fin structure and directly on the top surface of the isolation structure; and a source/drain (S/D) structure adjacent to the gate structure.
 7. The fin field effect transistor (FinFET) device structure as claimed in claim 6, wherein an entirety of a bottommost surface of the S/D structure is in direct contact with the top surface of the stop layer.
 8. The fin field effect transistor (FinFET) device structure as claimed in claim 6, wherein the first insulating composition of the stop layer is SiGeOx.
 9. The fin field effect transistor (FinFET) device structure as claimed in claim 6, wherein the gate structure comprises a gate dielectric layer and a gate electrode layer, and a lattice constant of the gate electrode layer is different from a lattice constant of the stop layer.
 10. The fin field effect transistor (FinFET) device structure as claimed in claim 6, wherein the stop layer has a thickness in a range from about 1 nm to about 50 nm from first top surface to the first bottom surface.
 11. A fin field effect transistor (FinFET) device structure, comprising: a first portion of a fin structure formed extending from a substrate; a stop layer formed over the first portion of the fin structure, wherein the stop layer is made of a first composition of an oxide of one of SiGe, Si, SiP or a combination thereof; an isolation structure formed over the substrate, wherein the isolation structure is adjacent to the stop layer and where at least a portion of the stop layer is laterally coplanar with and adjacent to at least a portion of the isolation structure such that the isolation structure interfaces the at least a portion of the stop layer; a second portion of the fin structure formed over the stop layer, the stop layer interposing the first and second portions of the fin structure and the first composition interfacing each of the first and second portions of the fin structure; a gate structure formed over the fin structure and directly above the isolation structure; and a source/drain (S/D) structure adjacent to the gate structure and disposed over the first portion of the fin structure, wherein the stop layer interposes the S/D structure and the first portion of the fin structure for an entire length of the S/D structure.
 12. The fin field effect transistor (FinFET) device structure as claimed in claim 11, wherein a portion of the S/D structure is inserted into the stop layer such that a thickness of the stop layer under the S/D structure is less than a thickness of the stop layer under the gate structure.
 13. The FinFET device structure of claim 11, wherein the S/D structure physically interfaces with a top surface of the stop layer.
 14. The FinFET device structure of claim 1, wherein a lateral sidewall of the isolation structure directly interfaces a lateral sidewall of the stop layer.
 15. The fin field effect transistor (FinFET) device structure as claimed in claim 1, wherein a top surface of the isolation structure is located at a position that is level with the top surface of the stop layer.
 16. The FinFET device structure of claim 1, wherein the stop layer has a first thickness under the gate structure and a second thickness under the S/D structure, the second thickness being less than the first thickness.
 17. The FinFET device structure of claim 1, further comprising: a contiguous layer of dielectric material disposed over the isolation structure and over the S/D structure, wherein the stop layer is in direct contact with the contiguous layer of dielectric material. 